The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Dec. 31, 2003
Junji Yoshida, Tokyo, JP;
Naoki Tsukiji, Tokyo, JP;
Toshio Kimura, Tokyo, JP;
Masashi Nakae, Tokyo, JP;
Takeshi Aikiyo, Tokyo, JP;
Junji Yoshida, Tokyo, JP;
Naoki Tsukiji, Tokyo, JP;
Toshio Kimura, Tokyo, JP;
Masashi Nakae, Tokyo, JP;
Takeshi Aikiyo, Tokyo, JP;
The Furukawa Electric Co., Ltd., Tokyo, JP;
Abstract
A semiconductor laser device having two active-layer stripe structures includes an n-InP substrate, an n-InP clad layer, a lower GRIN-SCH layer, an active layer, an upper GRIN-SCH layer, a p-InP clad layer, and a p-InGaAsP contact layer grown in this order, in a side cross section cut along one of the stripe structure. A high-reflection film is disposed on a reflection-side end surface, and a low-reflection film is disposed on an emission-side end surface. A p-side electrode is disposed on only a part of the upper surface of the p-InGaAsP contact layer so that a current non-injection area is formed on an area absent the p-side electrode.