The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7193881 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 20, 2007

Filed:

Jul. 01, 2004
Applicant:

Richard Hiram Womack, Albuquerque, NM (US);

Inventor:

Richard Hiram Womack, Albuquerque, NM (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory constructed from a dielectric layer sandwiched between a plurality of word conductors and a plurality of bit line conductors is disclosed. The dielectric layer includes a layer of ferroelectric material, and has first and second surfaces. The word conductors are located on the first surface. Each word conductor is connected to a corresponding word line driving circuit. The bit line conductors are located on the second surface. Each bit line conductor is connected to a corresponding bit line driving circuit and a corresponding sense amplifier by one or more disconnect switches. A disconnect switch is set to an open state if the bit line conductor connected to that disconnect switch is shorted to one of the word conductors.


Find Patent Forward Citations

Womack, Richard. (2007). Cross-point ferroelectric memory that reduces the effects of bit line to word line shorts (U.S. Patent No. 7193881). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7193881

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…