The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Oct. 14, 2004
Takanori Honda, Kanagawa, JP;
Takanori Honda, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
An integrated circuit includes a high-frequency power amplifier and a matching circuit. The high-frequency power amplifier has at least one stage of an amplifier element. The matching circuit has a MOSFET and a detector diode. The source of the MOSFET is connected to an input of a first stage amplifier element, the drain is connected to a ground, and the gate is also connected to the ground. A capacitor is connected between the gate of the MOSFET and the ground. The detector diode is connected in parallel between the drain and the gate of the MOSFET. Turning on the MOSFET reduces the effective gain of the first stage amplifier element, thereby allowing mode change.