The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Mar. 11, 2005
Arthur Ballato, Oceanport, NJ (US);
Richard H. Wittstruck, Howell, NJ (US);
Xiaojun Tong, WuXi, CN;
Yicheng LU, East Brunswick, NJ (US);
Arthur Ballato, Oceanport, NJ (US);
Richard H. Wittstruck, Howell, NJ (US);
Xiaojun Tong, WuXi, CN;
Yicheng Lu, East Brunswick, NJ (US);
The United States of America as represented by the Secretary of the Army, Washington, DC (US);
Abstract
Thin film bulk acoustic wave sensors with coatings of biological and chemical materials, multiple electrode depositions and a piezo-active thin film transducer layer are hosted on a substrate. The thin film bulk acoustic wave sensor suite, or T-BASS, produces a low-voltage, IC-compliant thickness-directed electric field that is substantially uniform over a substantial portion of the active area of the BAW structure. The BAWs produced are essentially extensional plane waves propagating away from the substrate surface and having phase progression substantially oblique to the substrate surface. For BAW applications requiring sensing by an active layer, it would be most desirable to have an electrode structure that is both IC-compliant and can be energized from a low-voltage source of electrical energy. The thin film BAW sensors are compatible with IC fabrication and processing techniques, such as photolithography. Both single channel and multiple channel thin film bulk acoustic wave sensors are provided.