The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Jan. 13, 2005
Toshiyuki Takemori, Saitama, JP;
Fuminori Sasaoka, Saitama, JP;
Yuji Watanabe, Saitama, JP;
Shindengen Electric Manufacturing Co., Ltd, Saitama, JP;
Abstract
In a semiconductor device in which gate trenches and source trenches are formed, when the semiconductor device is flatly viewed, Ntype source areas are formed in parallel with the gate trenches to ease the miniaturization of the semiconductor device. Ptype diffusion areas are separately formed in a direction orthogonal to the Ntype source areas and the gate trenches. Thus, the Ntype source areas and a P type body layer are formed in a laminated state, but the Ptype diffusion areas are not laminated. Therefore, the structure of a mesa section is extremely simple. Furthermore, gate electrode films are connected to one another by a connection member. Thus, the semiconductor device has such a structure as to easily secure electric connection to each gate electrode film from outside. According to the foregoing structure, it is possible to extremely ease the miniaturization of the semiconductor device.