Solid-state imaging device and solid-state imaging device array

Abstract

In a photosensitive part, arranged from pixels A aligned in n rows and m columns, supply wiring linesand, which are electrically connected and apply transfer voltages to transfer electrodesto, formed of polycrystalline silicon, are installed so as to cover parts of the top surfaces of light-shielded pixels D. Dead zones for installing supply wiring lines, which existed priorly at the respective end parts in a horizontal direction of a photosensitive part, can thereby be eliminated and the photosensitive part can be made wide. Also, in the case where a plurality of the solid-state image pickup devices are used upon being made adjacent each other in the horizontal direction, parts at which image pickup is not carried out can be lessened. Also, the amount of lowering of the amounts of incident light on light-shielded pixels D can be corrected based on the output signals from light-shielded pixels D or other pixels A. By the above, a solid-state image pickup device, with which the dead zones can be made small and the photosensitive part can be made wide, and a solid-state image pickup device array, using such solid-state image pickup devices, can be realized.