The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Oct. 24, 2003
Applicants:
Wiltold Paw, New Fairfield, CT (US);
Jonathan Wolk, Bridgewater, CT (US);
Inventors:
Wiltold Paw, New Fairfield, CT (US);
Jonathan Wolk, Bridgewater, CT (US);
Assignee:
Intersurface Dynamics, Inc., Bethel, CT (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for the caustic etching of silicon which is of importance for the semiconductor industry and silicon wafer manufacture in particular, that includes using one or more iodate or chlorite salts as additives in the etching process to achieve improved surface conditions, such as smaller facets and lower roughness, on the resulting silicon substrate.