The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Oct. 03, 2005
Hoon Kim, Gyeonggi-do, KR;
In-jae Song, Gueonggi-do, KR;
Won-joo Kim, Gyeonggi-do, KR;
Byoung-iyong Choi, Seoul, KR;
Hoon Kim, Gyeonggi-do, KR;
In-jae Song, Gueonggi-do, KR;
Won-joo Kim, Gyeonggi-do, KR;
Byoung-Iyong Choi, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
Provided is a method of manufacturing a nano scale semiconductor device, such as a nano scale P-N junction device or a CMOS using nano particles without using a mask or a fine pattern. The method includes dispersing uniformly a plurality of nano particles on a semiconductor substrate, forming an insulating layer covering the nano particles on the semiconductor substrate, partly removing the upper surfaces of the nano particles and the insulating layer, selectively removing the nano particles from the insulating layer, and partly forming doped semiconductor layers in the semiconductor substrate by partly doping the semiconductor substrate through spaces formed by removing the nano particles.