The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Apr. 20, 2005
Applicants:
Peter J. Hopper, San Jose, CA (US);
Philipp Lindorfer, San Jose, CA (US);
Vladislav Vashchenko, Palo Alto, CA (US);
Andy Strachan, Santa Clara, CA (US);
Inventors:
Peter J. Hopper, San Jose, CA (US);
Philipp Lindorfer, San Jose, CA (US);
Vladislav Vashchenko, Palo Alto, CA (US);
Andy Strachan, Santa Clara, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01);
U.S. Cl.
CPC ...
Abstract
A power transistor structure uses metal drain and source strips with non-uniform widths to reduce variations in current density across the power transistor structure. The reductions in current density, in turn, reduce the source-to-drain turn on resistance and maximize the overall current carrying capacity of power transistor structure.