The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2007

Filed:

Jan. 26, 2004
Applicant:

Kwan Ju Koh, Bucheon-si, KR;

Inventor:

Kwan Ju Koh, Bucheon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract

Example methods of manufacturing MOSFET devices are disclosed. One example method may include an oxidation, an etching, an ion implanting for a threshold voltage control to form an elevated source/drain region and thereby implements an ultra shallow junction.


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