The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2007

Filed:

Dec. 03, 2004
Applicants:

Seung-bum Kim, Ichon-shi, KR;

Dong-sauk Kim, Ichon-shi, KR;

Jung-taik Cheong, Ichon-shi, KR;

Inventors:

Seung-Bum Kim, Ichon-shi, KR;

Dong-sauk Kim, Ichon-shi, KR;

Jung-Taik Cheong, Ichon-shi, KR;

Assignee:

Hynix Semiconductor Inc., Ichon-shi, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a semiconductor memory device and a method for fabricating the same. The semiconductor memory device, including: a plurality of gate structures formed on a substrate; a contact junction region formed beneath the substrate disposed in lateral sides of the respective gate structures; a trench formed by etching a portion of the substrate disposed in the contact junction region with a predetermined thickness; a dopant diffusion barrier layer formed on sidewalls of the trench; and a contact plug filled into a space created between the gate structures and inside of the trench, wherein the dopant diffusion barrier layer prevents dopants within the contact plug from diffusing out.


Find Patent Forward Citations

Loading…