The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Sep. 22, 2005
Applicants:
Si-chen Lee, Taipei, TW;
Chao-yu Meng, Taipei, TW;
Hsu-yu Chang, Taipei, TW;
Inventors:
Assignee:
National Taiwan University, Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/336 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A polysilicon thin film fabrication method is provided, in which a heat-absorbing layer is used to provide sufficient heat for grain growth of an amorphous silicon thin film, and an insulating layer is used to isolate the heat-absorbing layer and the amorphous silicon thin film. A regular heat-conducting layer is used as a cooling source to control the crystallization position and grain size of the amorphous silicon thin film. Therefore, the amorphous silicon thin film can crystallize into a uniform polysilicon thin film, and the electrical characteristics of the polysilicon thin film can be stably controlled.