The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 20, 2007

Filed:

Aug. 13, 2004
Applicants:

Shunpei Yamazaki, Setagaya, JP;

Naoaki Yamaguchi, Yokohama, JP;

Setsuo Nakajima, Sagamihara, JP;

Inventors:

Shunpei Yamazaki, Setagaya, JP;

Naoaki Yamaguchi, Yokohama, JP;

Setsuo Nakajima, Sagamihara, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device including forming a gate electrode over a substrate; forming a pate insulating film over the pate electrode and over the substrate; forming a semiconductor film on the gate insulating film; providing the semiconductor film with a metal element; crystallizing the semiconductor film provided with the metal element; doping an element which is used for gettering into a portion of the crystallized semiconductor film; and heating the crystallized semiconductor film whereby the metal element contained in a channel region of the semiconductor film is gettered by the portion.


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