The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2007
Filed:
Sep. 15, 2004
Chun Te Lin, Hsinchu, TW;
Chih Sheng Yang, Hsinchu, TW;
Hong Zhi Lee, Hsinchu, TW;
Ta-te Chen, Hsinchu, TW;
Chun Te Lin, Hsinchu, TW;
Chih Sheng Yang, Hsinchu, TW;
Hong Zhi Lee, Hsinchu, TW;
Ta-Te Chen, Hsinchu, TW;
Mosel Vitelic, Inc., Hsinchu, TW;
Abstract
A method for monitoring an ion implanter is disclosed. In one embodiment, the method comprises providing a wafer, forming a barrier layer on the surface of the wafer wherein the barrier layer has a substantial blocking effect on ion implantation, performing an ion implantation process to the wafer, performing a thermal treatment process, removing the barrier layer, and measuring a physical property of the wafer. The measured physical property of the wafer can be used to ascertain the status of the ion implanter. For instance, the measured physical property can be used to determine whether the ion implanter has problems when the energy or concentration of the implanted ions is changed.