The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7192540 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 20, 2007

Filed:

Dec. 06, 2005
Applicants:

Sei Tsunoda, Tokyo, JP;

Hideharu Nobutoki, Tokyo, JP;

Noboru Mikami, Tokyo, JP;

Inventors:

Sei Tsunoda, Tokyo, JP;

Hideharu Nobutoki, Tokyo, JP;

Noboru Mikami, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 1/02 (2006.01); H01B 1/06 (2006.01); C08G 79/08 (2006.01); C01B 35/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a low dielectric constant material, which is excellent in thermal resistance, has low dielectric constant, and is applicable to a semiconductor device or electric appliances, an insulation film between semiconductor layers using the same, and the semiconductor device. The material is the low dielectric constant material having thermal resistance, which contains borazine skeletal molecules shown by the following formula (1) and the like in an inorganic or organic material molecule.


Find Patent Forward Citations

Tsunoda, Sei. (2007). Low dielectric constant material having thermal resistance, insulation film between semiconductor layers using the same, and semiconductor device (U.S. Patent No. 7192540). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7192540

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