The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Aug. 23, 2005
Ching-hsiang Hsu, Hsin-Chu, TW;
Shih-jye Shen, Hsin-Chu, TW;
Hsin-ming Chen, Tainan Hsien, TW;
Hai-ming Lee, Taipei, TW;
Ching-Hsiang Hsu, Hsin-Chu, TW;
Shih-Jye Shen, Hsin-Chu, TW;
Hsin-Ming Chen, Tainan Hsien, TW;
Hai-Ming Lee, Taipei, TW;
eMemory Technologies Inc., Hsin-Chu, TW;
Abstract
A memory cell includes an N-type well, three P-type doped regions formed on the N-type well, a dielectric layer formed on the N-type well and between a first doped region and a second doped region of the three P-type doped regions, a first gate formed on the dielectric layer, a charge storage structure formed on the N-type well and between the second doped region and a third doped region of the three P-type doped regions, and a second gate formed on the charge storage structure. Data is stored in the memory cell by injecting electrons based on the channel-hot-hole induced hot-electron injection mechanism, the band-to-band tunneling induced electron injection mechanism and the Fowler-Nordheim tunneling mechanism. Data is erased from the memory cell by ejecting electrons based on the Fowler-Nordheim tunneling mechanism. Whether data is stored in the charge storage structure or not can be distinguished by read operation.