The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Jun. 03, 2004
Young-kai Chen, Berkeley Heights, NJ (US);
Vincent Etienne Houtsma, Berkeley Heights, NJ (US);
Nils Guenter Weimann, Gillette, NJ (US);
Young-Kai Chen, Berkeley Heights, NJ (US);
Vincent Etienne Houtsma, Berkeley Heights, NJ (US);
Nils Guenter Weimann, Gillette, NJ (US);
Lucent Technologies Inc., Murray Hill, NJ (US);
Abstract
Apparatus comprising: a first compound semiconductor composition layer doped to have a first charge carrier polarity; a second compound semiconductor composition layer doped to have a second charge carrier polarity and located on the first layer; a third compound semiconductor composition layer doped to have the first charge carrier polarity and located on the second layer; a base electrode on the second layer; and a spacer ring interposed between and defining a charge carrier access path distance between the base electrode and the third layer, the path distance being within a range of between about 200 Å and about 1000 Å. Techniques for making apparatus. Apparatus is useful as a heterobipolar transistor, particularly for high frequency applications.