The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 13, 2007

Filed:

Aug. 23, 2004
Applicants:

Ashraf W. Lotfi, Bridgewater, NJ (US);

Jian Tan, Bridgewater, NJ (US);

Inventors:

Ashraf W. Lotfi, Bridgewater, NJ (US);

Jian Tan, Bridgewater, NJ (US);

Assignee:

Enpirion, Inc., Bridgewater, NJ (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An integrated circuit employable with a power converter. In one embodiment, the integrated circuit includes a power switch of a power train of the power converter formed on a semiconductor substrate. The integrated circuit also includes a driver switch of a driver configured to provide a drive signal to the power switch and embodied in a transistor including a gate located over a channel region recessed into the semiconductor substrate. The transistor also includes a source/drain including a lightly doped region located adjacent the channel region and a heavily doped region located adjacent the lightly doped region. The transistor further includes an oppositely doped well located under and within the channel region. The transistor still further includes a doped region, located between the heavily doped region and the oppositely doped well, having a doping concentration profile less than a doping concentration profile of the heavily doped region.


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