The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Dec. 02, 2004
Youichi Nagai, Itami, JP;
Makoto Kiyama, Itami, JP;
Takao Nakamura, Itami, JP;
Takashi Sakurada, Itami, JP;
Katsushi Akita, Itami, JP;
Koji Uematsu, Itami, JP;
Ayako Ikeda, Itami, JP;
Koji Katayama, Itami, JP;
Susumu Yoshimoto, Itami, JP;
Youichi Nagai, Itami, JP;
Makoto Kiyama, Itami, JP;
Takao Nakamura, Itami, JP;
Takashi Sakurada, Itami, JP;
Katsushi Akita, Itami, JP;
Koji Uematsu, Itami, JP;
Ayako Ikeda, Itami, JP;
Koji Katayama, Itami, JP;
Susumu Yoshimoto, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
A light emitting device includes a nitride semiconductor substrate with a resistivity of 0.5 Ω·cm or less, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type nitride semiconductor layer at a first main surface side of the nitride semiconductor substrate, and a light emitting layer placed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, wherein one of the nitride semiconductor substrate and the p-type nitride semiconductor layer is mounted at the top side which emits light and the other is placed at the down side, and a single electrode is placed at the top side. Therefore, there is provided a light emitting device which has a simple configuration thereby making it easy to fabricate, can provide a high light emission efficiency for a long time period, and can be easily miniaturized.