The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Aug. 26, 2004
Applicant:
Tetsuya Taki, Aichi-ken, JP;
Inventor:
Tetsuya Taki, Aichi-ken, JP;
Assignee:
Toyoda Gosei Co., Ltd., Aichi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
A GaN based semiconductor light emitting device has: an active layer disposed between an n-type layer and a p-type layer; and a polycrystalline nitride based semiconductor uneven layer disposed between the n-type layer and the active layer. The active layer is formed uneven according to the uneven form of the polycrystalline nitride based semiconductor uneven layer.
Taki, Tetsuya. (2007). Gan based semiconductor light emitting device and method of making the same (U.S. Patent No. 7190001). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7190001
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile