The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Jul. 13, 2005
Method of forming silicon oxynitride layer in semiconductor device and apparatus of forming the same
Young-sub You, Gyeonggi-do, KR;
Cheol-kyu Yang, Gyeonggi-do, KR;
Woong Lee, Seoul, KR;
Jae-chul Lee, Gyeonggi-do, KR;
Hun-hyeoung Leam, Gyeonggi-do, KR;
Young-Sub You, Gyeonggi-do, KR;
Cheol-Kyu Yang, Gyeonggi-do, KR;
Woong Lee, Seoul, KR;
Jae-Chul Lee, Gyeonggi-do, KR;
Hun-Hyeoung Leam, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
There are provided a method and an apparatus of forming an insulating layer including silicon oxynitride. The method includes performing a plasma treatment process for supplying a plasma reaction gas to a substrate to be treated after completing the annealing process. The apparatus includes a sealed processing room having gas supply and exhaust lines running thereto. A quartz inner tube and quartz inlet pipe both include holes therethrough, but in orthogonal directions to one another, to flow a reaction gas onto the wafers loaded within the sealed processing room.