The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Aug. 19, 2004
Zhiqiang Wu, Plano, TX (US);
Shaofeng Yu, Plano, TX (US);
C. Rinn Cleavelin, Lubbock, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A technique is disclosed for increasing the width of a transistor () while the transistor itself may be scaled down. The transistor width () is increased by forming recesses () within shallow trench isolation (STI) regions () adjacent to the transistor (). The recesses () provide an area that wraps around the transistor and thereby increases the width () of the transistor (). This wraparound area provides additional space for dopant atom deposition, which facilitates a reduction in random dopant fluctuation (RDF). In this manner, transistors formed in accordance with one or more aspects of the present invention, may yield improved performance when incorporated into SRAM since the probability that such transistors will be more closely matched is increased.