The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2007
Filed:
Dec. 02, 2002
Jianjun Feng, Huntsville, AL (US);
Sivaramakrishnan Krishnamoorthy, Huntsville, AL (US);
Vinod Bhagwan Makhijani, Huntsville, AL (US);
Jianjun Feng, Huntsville, AL (US);
Sivaramakrishnan Krishnamoorthy, Huntsville, AL (US);
Vinod Bhagwan Makhijani, Huntsville, AL (US);
Abstract
A method and system for controlling flow motion in a channel/cavity in a microfluidic system includes positioning at least one pair of electrodes in and/or proximate to the channel/cavity. A buffer solution is placed in the channel/cavity, the buffer solution having at least one dielectric property that varies in response to changes in temperature of the solution. An AC/DC voltage is applied to the electrodes to generate an electric field in the channel/cavity; the AC voltage having a known magnitude and frequency and the DC voltage having a known magnitude. The magnitude of the AC/DC voltage is adjusted to cause Joule heating of the buffer solution in the channel/cavity. The geometry and position of the electrodes is adjusted to generate a temperature gradient in the buffer solution, thereby causing a non-uniform distribution of the dielectric property within the solution in the channel/cavity. The dielectric non-uniformity produces a body force and flow in the solution. Also, the frequency of the AC voltage is adjusted to generate flow of the buffer solution in the channel/cavity in response to the non-uniform distribution of the dielectric property.