The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2007
Filed:
Dec. 09, 2004
Seung Ho Chang, Chungcheongbuk-do, KR;
Seung Ho Chang, Chungcheongbuk-do, KR;
Hynix Semiconductor Inc., Kyungki-Do, KR;
Abstract
The disclosed is a method of reading a multi-level NAND flash memory cell and a circuit for the same. The read circuit for the NAND flash memory device includes a NAND flash memory cell having multi-level information, a first page buffer for storing an upper-bit, a second page buffer for storing a lower bit, and pass transistor for changing information of the second page buffer according to a variation of the first page buffer. In accordance with the present invention, '00' or '01' information is read out by applying a first voltage to a word line of the cell. “00”, “01”, or “11” information is read out by applying a second voltage to the word line. A latch pass control signal is applied to a pass transistor. Thus, it is possible to read out “00”, “01”, “11”, or “10” information.