The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7187021 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 06, 2007

Filed:

Dec. 10, 2003
Applicants:

Chayan Mitra, Bangalore, IN;

Ramakrishna Rao, Bangalore, IN;

Jeffrey Bernard Fedison, Niskayuna, NY (US);

Ahmed Elasser, Latham, NY (US);

Inventors:

Chayan Mitra, Bangalore, IN;

Ramakrishna Rao, Bangalore, IN;

Jeffrey Bernard Fedison, Niskayuna, NY (US);

Ahmed Elasser, Latham, NY (US);

Assignee:

General Electric Company, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/772 (2006.01);
U.S. Cl.
CPC ...
Abstract

A transistor switch for a system operating at high frequencies is provided. The transistor switch comprises a graded channel region between a source region and a drain region, the graded channel region configured for providing a low resistance to mobile negative charge carriers moving from the source region to the drain region, wherein the graded channel comprises at least two doping levels.


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