The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2007
Filed:
Oct. 29, 2004
Martin Pölzl, Alt-Ossiach, AT;
Franz Hirler, Isen, AT;
Oliver Häberlen, Villach, AT;
Manfred Kotek, Villach, AT;
Walter Rieger, Arnoldstein, AT;
Martin Pölzl, Alt-Ossiach, AT;
Franz Hirler, Isen, AT;
Oliver Häberlen, Villach, AT;
Manfred Kotek, Villach, AT;
Walter Rieger, Arnoldstein, AT;
Infineon Technologies AG, Munich, DE;
Abstract
When fabricating trench power transistor arrangements () with active cell array trenches () and passive connecting trenches (), the cell array trenches () are provided in greater width than the connecting trenches (). An auxiliary layer () is deposited conformally onto a lower field electrode structure () in the cell array trenches () and the connecting trenches () and is etched back as far as the top edge in the connecting trenches (), which removes it from the cell array trenches (). The auxiliary layer () allows the gate oxide () to be patterned without a complex mask process. An edge trench (), with an electrode, on the potential of the field electrode structure () shields the cell array () from a drain potential.