The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2007
Filed:
Oct. 31, 2003
Applicants:
Hyungjun Kim, Lagrangeville, NY (US);
Andrew J. Kellock, Sunnyvale, CA (US);
Stephen M. Rossnagel, Pleasantville, NY (US);
Inventors:
Hyungjun Kim, Lagrangeville, NY (US);
Andrew J. Kellock, Sunnyvale, CA (US);
Stephen M. Rossnagel, Pleasantville, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method to deposit TaN by plasma enhanced layer with various nitrogen content. Using a mixture of hydrogen and nitrogen plasma, the nitrogen content in the film can be controlled from 0 to N/Ta=1.7. By turning off the nitrogen flow during deposition of TaN, a TaN/Ta bilayer is easily grown, which has copper diffusion barrier properties superior to those of a single Ta layer or a single TaN layer.