The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Dec. 02, 2003
Richard Fournel, Lumbin, FR;
Emmanuel Vincent, Grenoble, FR;
Sylvie Bruyere, Grenoble, FR;
Philippe Candelier, Saint Mury, FR;
Francois Jacquet, Froges, FR;
Richard Fournel, Lumbin, FR;
Emmanuel Vincent, Grenoble, FR;
Sylvie Bruyere, Grenoble, FR;
Philippe Candelier, Saint Mury, FR;
Francois Jacquet, Froges, FR;
STMicroelectronics S.A., Montrouge, FR;
Abstract
An SRAM memory cell includes first and second inverters () interconnected between first and second data nodes. Each inverter is formed from complementary MOS transistors () connected in series between a DC voltage supply source and a grounding circuit (). A circuit () programs the MOS transistors by causing an irreversible degradation of a gate oxide layer of at least some of the transistors ().