The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2007

Filed:

Aug. 17, 2004
Applicants:

Kyoung Suk Ko, Chungcheongbuk-Do, KR;

Dong Suk Jun, Daejeon-Shi, KR;

Dong Young Kim, Dajeon-Shi, KR;

Hong Yeol Lee, Chungcheongbuk-Do, KR;

Sang Seok Lee, Daejeon-Shi, KR;

Inventors:

Kyoung Suk Ko, Chungcheongbuk-Do, KR;

Dong Suk Jun, Daejeon-Shi, KR;

Dong Young Kim, Dajeon-Shi, KR;

Hong Yeol Lee, Chungcheongbuk-Do, KR;

Sang Seok Lee, Daejeon-Shi, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01P 1/203 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a microstrip band pass filter and, more specifically, to a microstrip band pass filter using end-coupled stepped impedance resonators that can be used in a millimeter wave band, wherein the microstrip band pass filter comprises: a dielectric substrate; a conductor plate located on a lower surface of the dielectric substrate; and an input terminal, a plurality of SIRs and an output terminal located on an upper surface of the dielectric substrate in series, wherein the input terminal, the plurality of SIRs and the outputs terminal are conductors and end-coupled through gaps, whereby the microstrip band pass filter has a good attenuation characteristic and a narrowband characteristic, and is insensitive to the manufacturing error, and a fine frequency transition can be made without distortion just with width adjustment of the low impedance transmission line of the SIR.


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