The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2007

Filed:

Nov. 17, 2004
Applicants:

Takashi Ichihara, Tokushima, JP;

Daisuke Sanga, Tokushima, JP;

Takeshi Kususe, Tokushima, JP;

Takao Yamada, Komatsushima, JP;

Inventors:

Takashi Ichihara, Tokushima, JP;

Daisuke Sanga, Tokushima, JP;

Takeshi Kususe, Tokushima, JP;

Takao Yamada, Komatsushima, JP;

Assignee:

Nichia Corporation, Tokushima, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nitride semiconductor light emitting element is provided with: a substratehaving a pair of main surfaces that face each other; a nitride semiconductor layer of a first conductivity type layered on one of the main surfaces of substrate; a nitride semiconductor layer of a second conductivity type layered on the nitride semiconductor layer of the first conductivity type; an active layerformed between the nitride semiconductor layer of the first conductivity type and the nitride semiconductor layer of the second conductivity type; and a reflective layerformed on the nitride semiconductor layer of the second conductivity type for reflecting light from active layertoward the nitride semiconductor layer of the second conductivity type. This nitride semiconductor light emitting element can be mounted on a circuit board, with the other main surface of the above described substratebeing used as the main light emitting surface. Furthermore, a translucent conductive layeris formed between reflective layerand the nitride semiconductor layer of the second conductivity type, and an uneven interfaceis formed as the interface between translucent conductive layerand reflective layer


Find Patent Forward Citations

Loading…