The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Dec. 22, 2004
Applicant:
Choon Kun Ryu, Seoul, KR;
Inventor:
Choon Kun Ryu, Seoul, KR;
Assignee:
Hynix Semiconductor Inc., Kyoungki-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for forming an isolation film of a semiconductor device is disclosed which includes forming trenches in a semiconductor substrate, forming a first HDP oxide film in the formed trenches, performing an etch-back process using a mixing gas of CFgas and Ogas to form vertical walls in the first HDP oxide films and forming a second HDP oxide film on the resulting structure. The characteristics of a device can be improved because diffusion of F ions in a FSG film formed on the first HDP oxide film is minimized.