The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Jan. 22, 2004
Olivier Pizzuto, Fuveau, FR;
Romain Laffont, Ch. Chateau Gombert, FR;
Jean-michel Mirabel, Maison de la Colline, FR;
Olivier Pizzuto, Fuveau, FR;
Romain Laffont, Ch. Chateau Gombert, FR;
Jean-Michel Mirabel, Maison de la Colline, FR;
STMicroelectronics (Rousset) SAS, Rousset, FR;
Abstract
The invention relates to a production process for a flash memory from a semi-conductor substrate fitted with at least two adjacent rows of precursor stacks of floating gate transistors, the precursor stacks being at least partially covered by a protective resin and being separated by a formation zone for a source line. The process includes forming a trench in the formation zone for the source line by an attack of this zone and of the protective resin. The result of the attack step includes a deposit of residue from the resin below the precursor stacks. The residue deposit is removed. A source line is implanted in the formation zone below the precursor stacks. This process enables the time needed for erasing the memory to be reduced.