The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2007

Filed:

Mar. 24, 2005
Applicants:

Frederick A. Perner, Santa Barbara, CA (US);

Janice Nickel, Sunnyvale, CA (US);

Lung Tran, Saratoga, CA (US);

Inventors:

Frederick A. Perner, Santa Barbara, CA (US);

Janice Nickel, Sunnyvale, CA (US);

Lung Tran, Saratoga, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

An information storage device is provided. The information storage device may be a magnetic random access memory (MRAM) device including a resistive cross point array of spin dependent tunneling (SDT) junctions or magnetic memory elements, with word lines extending along rows of the SDT junctions and bit lines extending along the columns of the SDT junctions. The present design includes a plurality of heating elements connected in series with associated magnetic memory elements, each heating element comprising a diode. Voltage applied to a magnetic memory element and associated heating element causes reverse current to flow through the diode, thereby producing heat from the diode and heating the magnetic memory element, thereby facilitating the write function of the device.


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