The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Jun. 13, 2005
Carl Dohrman, Somerville, MA (US);
Saurabh Gupta, Cambridge, MA (US);
Eugene A. Fitzgerald, Windham, NH (US);
Carl Dohrman, Somerville, MA (US);
Saurabh Gupta, Cambridge, MA (US);
Eugene A. Fitzgerald, Windham, NH (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
An electro-absorption light intensity modulator device is provided that comprises a first and a second layer disposed relative to the first layer so as to provide a light-absorbing optical confinement region. The first layer comprises a first insulator layer, and the light-absorbing optical confinement region comprises at least one quantum-confined structure. The at least one quantum-confined structure possesses dimensions such, that upon an application of an electric field in the at least one quantum-confined structure, light absorption is at least partially due to a transition of at least one carrier between a valence state and a conduction state of the at least one quantum-confined structure. A method is also provided for fabricating an electro-absorption light intensity modulator device. The method comprises providing a first insulator layer, disposing a light absorption region over the first insulator layer, and disposing a second insulator layer over the light absorption region, wherein light absorption region comprises at least one quantum-confined structure. The at least one quantum-confined structure possesses dimensions such that, upon an application of an electric field in the at least one quantum-confined structure, light absorption is at least partially due to a transition of at least one carrier between a valence state and a conduction state of the at least one quantum-confined structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile