The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2007

Filed:

Dec. 20, 2004
Applicants:

Minoru Kanbara, Hachioji, JP;

Shinobu Sumi, Tama, JP;

Takumi Yamamoto, Fussa, JP;

Inventors:

Minoru Kanbara, Hachioji, JP;

Shinobu Sumi, Tama, JP;

Takumi Yamamoto, Fussa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03L 5/00 (2006.01); H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
Abstract

The level shift circuit in the semiconductor circuit of the invention has a configuration comprising an input stage inverter circuit which inputs an input signal having a first voltage amplitude and outputs an inverted signal of this input signal, an output stage inverter circuit which inputs at least the output signal of the input stage inverter circuit and the output signal has a second voltage amplitude larger than the first voltage amplitude and a bootstrap circuit section which boosts a voltage value of input signal voltage of the output stage inverter circuit and the potential difference of the input signal and the output signal is held as a voltage component. The level shift circuit of each circuit is a Thin-Film Transistor at least using a semiconductor layer composed of amorphous silicon having single channel polarity as a switching element.


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