The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2007

Filed:

Apr. 20, 2005
Applicants:

Ket Chiew Sia, Penang, MY;

Choong Kit Wong, Penang, MY;

Boon Haw Ooi, Kuala Perlis, MY;

Kok Siong Tee, Penang, MY;

Inventors:

Ket Chiew Sia, Penang, MY;

Choong Kit Wong, Penang, MY;

Boon Haw Ooi, Kuala Perlis, MY;

Kok Siong Tee, Penang, MY;

Assignee:

Altera Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 19/0175 (2006.01);
U.S. Cl.
CPC ...
Abstract

An adjustable level shifter with native and kicker transistors is provided. The level shifter provides high switching speeds, adjustable output voltage levels, and low jitter. The level shifter has first and second thick-oxide p-channel metal-oxide-semiconductor (PMOS) transistors, first and second thick-oxide native n-channel metal-oxide-semiconductor (NMOS) transistors, and first and second thin-oxide NMOS transistors. The first PMOS transistor, first native transistor, and first NMOS transistor are connected in series and the second PMOS transistor, second native transistor, and second NMOS transistor are connected in series. An input data signal and an inverted version of the input data signal drive the gates of the thin-oxide NMOS transistors. A node located between the first PMOS transistor and first native transistor is connected to an output data terminal. The kicker transistor is connected in parallel with the first PMOS transistor.


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