The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 20, 2007

Filed:

May. 25, 2004
Applicants:

Joerg Appenzeller, Valhalla, NY (US);

Joachim Knoch, Herzogenrath, DE;

Inventors:

Joerg Appenzeller, Valhalla, NY (US);

Joachim Knoch, Herzogenrath, DE;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/72 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a tunneling nanotube field effect transistor includes forming in a nanotube an n-doped region and a p-doped region which are separated by an undoped channel region of the transistor. Electrical contacts are provided for the doped regions and a gate electrode that is formed upon a gate dielectric layer deposited on at least a portion of the channel region of the transistor.


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