The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Dec. 02, 2004
Seung-hwan Lee, Seoul, KR;
Jae-dong Byun, Seoul, KR;
Sung-tae Kim, Seoul, KR;
Young-sun Kim, Gyeonggi-do, KR;
Dal-won Lee, Seoul, KR;
Song-won Ko, Seoul, KR;
Seung-hwan Lee, Seoul, KR;
Jae-dong Byun, Seoul, KR;
Sung-tae Kim, Seoul, KR;
Young-sun Kim, Gyeonggi-do, KR;
Dal-won Lee, Seoul, KR;
Song-won Ko, Seoul, KR;
Abstract
Methods of forming a capacitor of a semiconductor device can include forming a lower electrode of a capacitor on a semiconductor substrate and forming a dielectric material layer of Ba(TiSn)O(BTS) or Ba(TiZr)O(BTZ) on the lower electrode. An amorphous layer can be formed on the dielectric material layer. An upper electrode of the capacitor can be formed on the amorphous layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile