The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Sep. 17, 2004
Applicants:
Srinivasan Chakravarthi, Murphy, TX (US);
Periannan R. Chidambaram, Richardson, TX (US);
Inventors:
Srinivasan Chakravarthi, Murphy, TX (US);
Periannan R. Chidambaram, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method () of forming a transistor () includes treating () at least some of a semiconductor substrate () with carbon and then forming () a gate structure () over the semiconductor substrate. A channel region () is thereby being defined within the semiconductor substrate () below the gate structure (). Source and drain regions () are then formed () within the semiconductor substrate () on opposing sides of the channel () with a phosphorus dopant.