The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Aug. 26, 2004
Applicants:
Zhizhang Chen, Corvallis, OR (US);
Hang Liao, Corvallis, OR (US);
David M. Schut, Philomath, OR (US);
Michael Setera, Albany, OR (US);
Inventors:
Zhizhang Chen, Corvallis, OR (US);
Hang Liao, Corvallis, OR (US);
David M. Schut, Philomath, OR (US);
Michael Setera, Albany, OR (US);
Assignee:
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of processing a type III–VI semiconductor material on a silicon substrate to improve minority carrier diffusion length and EBIC response is provided. The semiconductor material is heated to a temperature in the range of 300° C.–600° C. for a period in the range of 20 seconds to 60 minutes in an atmosphere having a composition of 0–10% of hydrogen in nitrogen.