The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Sep. 03, 2003
Kannan Ramanathan, Golden, CO (US);
Falah S. Hasoon, Golden, CO (US);
Sarah E. Asher, Wheat Ridge, CO (US);
James Dolan, Arvada, CO (US);
James C. Keane, Lakewood, CO (US);
Kannan Ramanathan, Golden, CO (US);
Falah S. Hasoon, Golden, CO (US);
Sarah E. Asher, Wheat Ridge, CO (US);
James Dolan, Arvada, CO (US);
James C. Keane, Lakewood, CO (US);
Midwest Research Institute, Kansas City, MO (US);
Abstract
A process for making a thin film ZnO/Cu(InGa)Sesolar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Selayer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Selayer on the metal back contact on the glass substrate to a temperature range between about 100° C. to about 250° C.; subjecting the heated layer of Cu(InGa)Seto an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.