The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Sep. 21, 2004
Haruhiko Okazaki, Yokohama, JP;
Hideto Sugawara, Kawasaki, JP;
Haruhiko Okazaki, Yokohama, JP;
Hideto Sugawara, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of manufacturing an LED forms an InGaN active layer on a substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes a nickel layer for forming an ohmic contact with a p-GaN layer, a molybdenum having a barrier function of preventing diffusion of impurities, an aluminum layer as a high-reflection electrode, a titanium layer having a barrier function, and a gold layer for improving the contact with a submount on a lead frame. Forming a p-side electrode with this five-layered structure realizes an ohmic contact and high reflectance at the same time.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile