The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 20, 2007
Filed:
Apr. 25, 2005
Applicants:
William J. Baney, Kokomo, IN (US);
Dan W. Chilcott, Greentown, IN (US);
Inventors:
William J. Baney, Kokomo, IN (US);
Dan W. Chilcott, Greentown, IN (US);
Assignee:
Delphi Technologies, Inc., Troy, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
A technique for manufacturing silicon structures includes etching a cavity into a first side of an epitaxial wafer. A thickness of an epitaxial layer is selected, based on a desired depth of the etched cavity and a desired membrane thickness. The first side of the epitaxial wafer is then bonded to a first side of a handle wafer. After thinning the epitaxial wafer until only the epitaxial layer remains, desired circuitry is formed on a second side of the remaining epitaxial layer, which is opposite the first side of the epitaxial wafer.