The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Feb. 11, 2004
Hiroshi Iwata, Nara, JP;
Akihide Shibata, Nara, JP;
Yoshifumi Yaoi, Yamatokoriyama, JP;
Yasuaki Iwase, Tenri, JP;
Masaru Nawaki, Nara, JP;
Yoshinao Morikawa, Ikoma, JP;
Kenichi Tanaka, Fukuyama, JP;
Hiroshi Iwata, Nara, JP;
Akihide Shibata, Nara, JP;
Yoshifumi Yaoi, Yamatokoriyama, JP;
Yasuaki Iwase, Tenri, JP;
Masaru Nawaki, Nara, JP;
Yoshinao Morikawa, Ikoma, JP;
Kenichi Tanaka, Fukuyama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor memory device includes: a memory cell having a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed below the gate electrode, a diffusion region disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function of retaining charges; and an amplifier, the memory cell and the amplifier being connected to each other so that an output of the memory cell is inputted to the amplifier.