The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Sep. 29, 2004
Daniel Charles Kerr, Orlando, FL (US);
Roger W. Key, Orlando, FL (US);
Bradley J. Albers, Dallas, TX (US);
William A. Russell, Orlando, FL (US);
Alan Sangone Chen, Windermere, FL (US);
Daniel Charles Kerr, Orlando, FL (US);
Roger W. Key, Orlando, FL (US);
Bradley J. Albers, Dallas, TX (US);
William A. Russell, Orlando, FL (US);
Alan Sangone Chen, Windermere, FL (US);
Agere Systems Inc, Allentown, PA (US);
Abstract
A resistor formed on a material layer of a semiconductor integrated circuit and a method for forming the resistor. The resistor comprises a region of resistive material with a plurality of conductive contacts or plugs in electrical contact with and extending away from the resistive material. A first and a second interconnect line are formed overlying the plugs and in conductive contact with one or more of the plurality of plugs, such that a portion of the resistive material between the first and the second interconnect lines provides a desired resistance. According to a method of the present invention, the plurality of conductive contacts are formed using a first photolithographic mask and the first and the second interconnect lines are formed using a second photolithographic mask. The desired resistance is changed by modifying the first or the second mask such that one or more dimensions of a region of the resistive material between the first and the second interconnect lines is altered.