The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 13, 2007

Filed:

Oct. 07, 2002
Applicants:

Claire Baragatti, Grenoble, FR;

Robert Cuchet, Grenoble, FR;

Line Vieux-rochaz, Sassenage, FR;

Inventors:

Claire Baragatti, Grenoble, FR;

Robert Cuchet, Grenoble, FR;

Line Vieux-Rochaz, Sassenage, FR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 33/02 (2006.01); H01L 43/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and an apparatus of a magnetic field sensor structure are disclosed. The magnetic field sensor structure is formed by a bridge of four magnetoresistors (), wherein each magnetoresistor has a longitudinal direction, and each magnetoresistor () is polarised by magnets (). Also, each magnet has a main magnetisation field along an axial magnetisation direction, and a magnetic leakage field. The polarisation magnets () and the magnetoresistors () are arranged in the form of layers on the same substrate. In one embodiment, the polarisation magnets () are at the same level as the magnetoresistors () wherein the polarisation magnets () have the same main magnetisation direction, which is contained in the plane of the layers. The magnetoresistors have their longitudinal direction parallel with that of the axial direction of the magnets. In one embodiment, two magnetoresistors are arranged in the axial field of magnets and two others are in the magnet leakage field.


Find Patent Forward Citations

Loading…