The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Nov. 04, 2004
Eun-ae Chung, Gyeonggi-do, KR;
Myoung-bum Lee, Seoul, KR;
Young-pil Kim, Gyeonggi-do, KR;
Jin-gyun Kim, Gyeonggi-do, KR;
Bean-jun Jin, Seoul, KR;
Eun-Ae Chung, Gyeonggi-do, KR;
Myoung-Bum Lee, Seoul, KR;
Young-Pil Kim, Gyeonggi-do, KR;
Jin-Gyun Kim, Gyeonggi-do, KR;
Bean-Jun Jin, Seoul, KR;
Samsung Electronics Co., Ltd., Kyungki-Do, KR;
Abstract
Forming a semiconductor device can include forming an insulating layer on a semiconductor substrate including a conductive region thereof, wherein the insulating layer has a contact hole therein exposing a portion of the conductive region. A polysilicon contact plug can be formed in the contact hole wherein at least a portion of the polysilicon contact plug is doped with an element having a diffusion coeffient that is less than a diffusion coefficient of phosphorus (P). Related structures are also discussed.