The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Jul. 27, 2004
Hiroshi Iwata, Nara, JP;
Akihide Shibata, Nara, JP;
Seizo Kakimoto, Nara, JP;
Kouichiro Adachi, Tenri, JP;
Masayuki Nakano, Nara, JP;
Hiroshi Iwata, Nara, JP;
Akihide Shibata, Nara, JP;
Seizo Kakimoto, Nara, JP;
Kouichiro Adachi, Tenri, JP;
Masayuki Nakano, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor devicecomprises a semiconductor substrateincluding an isolation regionand an active region, a gate electrodeprovided on the active regionvia a gate insulating film, part of a side of the gate electrodebeing covered with a gate electrode side wall insulating film, and a source regionand a drain regionprovided on opposite sides of the gate electrodevia the gate electrode side wall insulating film. At least one of the source regionand the drain regionhas a second surface for contacting a contact conductor. The second surface is tilted with respect to a first surface A–A'. An angle between the second surface and a surface of the isolation region is 80 degrees or less.