The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Nov. 21, 2003
Tsunenori Asatsuma, Kanagawa, JP;
Shigetaka Tomiya, Tokyo, JP;
Koshi Tamamura, Tokyo, JP;
Tsuyoshi Tojo, Miyagi, JP;
Osamu Goto, Miyagi, JP;
Kensaku Motoki, Osaka, JP;
Tsunenori Asatsuma, Kanagawa, JP;
Shigetaka Tomiya, Tokyo, JP;
Koshi Tamamura, Tokyo, JP;
Tsuyoshi Tojo, Miyagi, JP;
Osamu Goto, Miyagi, JP;
Kensaku Motoki, Osaka, JP;
Sony Corporation, Tokyo, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
When a semiconductor light emitting device or a semiconductor device is manufactured by growing nitride III-V compound semiconductor layers, which will form a light emitting device structure or a device structure, on a nitride III-V compound semiconductor substrate composed of a first region in form of a crystal having a first average dislocation density and a plurality of second regions having a second average dislocation density higher than the first average dislocation density and periodically aligned in the first region, device regions are defined on the nitride III-V compound semiconductor substrate such that the device regions do not substantially include second regions, emission regions or active regions of devices finally obtained do not include second regions.