The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
May. 05, 2005
Koji Ohtsuka, Niiza, JP;
Junji Sato, Niiza, JP;
Tetsuji Moku, Niiza, JP;
Yoshitaka Tanaka, Niiza, JP;
Mikio Tajima, Niiza, JP;
Koji Ohtsuka, Niiza, JP;
Junji Sato, Niiza, JP;
Tetsuji Moku, Niiza, JP;
Yoshitaka Tanaka, Niiza, JP;
Mikio Tajima, Niiza, JP;
Sanken Electric Co., Ltd., , JP;
Abstract
A light-emitting diode has a low-resistivity silicon substrate on which there are laminated a buffer layer, an n-type lower confining layer, an active layer of multiple quantum well configuration, and a p-type upper confining layer. The active layer is constituted of cyclic alternations of a barrier sublayer of InGaN, a first complementary sublayer of AlGaInN, a well sublayer of InGaN, and a second complementary sublayer of AlGaInN. The proportions of the noted ingredients of the active sublayers are all specified. The first and the second complementary sublayers prevent the evaporation or diffusion of indium from the neighboring sublayers.